標題: | Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate |
作者: | Chang, Chia-Hao Li, Zong-Lin Pan, Chien-Hung Lu, Hong-Ting Lee, Chien-Ping Lin, Sheng-Di 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 14-二月-2014 |
摘要: | We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 mu m at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234 W/cm(2) and 20.5 cm(-1), respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source. (C) 2014 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4865170 http://hdl.handle.net/11536/23785 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.4865170 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 115 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |