Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate

Abstract

The mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented.