Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Chia-Hao	en_US
dc.contributor.author	Li, Zong-Lin	en_US
dc.contributor.author	Lu, Hong-Ting	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2017-04-21T06:49:15Z	-
dc.date.available	2017-04-21T06:49:15Z	-
dc.date.issued	2014	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136151	-
dc.description.abstract	The mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented.	en_US
dc.language.iso	en_US	en_US
dc.title	Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000369908602471	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文