標題: Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
作者: Chang, Chia-Hao
Li, Zong-Lin
Lu, Hong-Ting
Pan, Chien-Hung
Lee, Chien-Ping
Lin, Gray
Lin, Sheng-Di
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InP-based;short-wavelength infrared;'W'-type quantum wells;InAlGaAs separate confined layer
公開日期: 1-二月-2015
摘要: The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.
URI: http://dx.doi.org/10.1109/LPT.2014.2362151
http://hdl.handle.net/11536/124358
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2362151
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 27
起始頁: 225
結束頁: 228
顯示於類別:期刊論文