Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate

Title:	Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
Authors:	Chang, Chia-Hao Li, Zong-Lin Lu, Hong-Ting Pan, Chien-Hung Lee, Chien-Ping Lin, Gray Lin, Sheng-Di 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	InP-based;short-wavelength infrared;'W'-type quantum wells;InAlGaAs separate confined layer
Issue Date:	1-Feb-2015
Abstract:	The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.
URI:	http://dx.doi.org/10.1109/LPT.2014.2362151 http://hdl.handle.net/11536/124358
ISSN:	1041-1135
DOI:	10.1109/LPT.2014.2362151
Journal:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	27
Begin Page:	225
End Page:	228
Appears in Collections:	Articles

APA	Chang, C., Li, Z., Lu, H., Pan, C., Lee, C., Lin, G., & Lin, S. (2015). Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate. WOS:000349190700001.
Bibtex	@article{Chang2015Low-Threshold, title={Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate}, author={Chang, Chia-Hao and Li, Zong-Lin and Lu, Hong-Ting and Pan, Chien-Hung and Lee, Chien-Ping and Lin, Gray and Lin, Sheng-Di}, journal={WOS:000349190700001}, year={2015}, url={https://ir.lib.nycu.edu.tw/handle/11536/124358}, }