標題: | Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate |
作者: | Chang, Chia-Hao Li, Zong-Lin Lu, Hong-Ting Pan, Chien-Hung Lee, Chien-Ping Lin, Gray Lin, Sheng-Di 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | InP-based;short-wavelength infrared;'W'-type quantum wells;InAlGaAs separate confined layer |
公開日期: | 1-二月-2015 |
摘要: | The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively. |
URI: | http://dx.doi.org/10.1109/LPT.2014.2362151 http://hdl.handle.net/11536/124358 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2014.2362151 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 27 |
起始頁: | 225 |
結束頁: | 228 |
顯示於類別: | 期刊論文 |