Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate

doi:10.1109/LPT.2014.2362151

標題:	Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
作者:	Chang, Chia-Hao Li, Zong-Lin Lu, Hong-Ting Pan, Chien-Hung Lee, Chien-Ping Lin, Gray Lin, Sheng-Di 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	InP-based;short-wavelength infrared;'W'-type quantum wells;InAlGaAs separate confined layer
公開日期:	1-Feb-2015
摘要:	The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.
URI:	http://dx.doi.org/10.1109/LPT.2014.2362151 http://hdl.handle.net/11536/124358
ISSN:	1041-1135
DOI:	10.1109/LPT.2014.2362151
期刊:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	27
起始頁:	225
結束頁:	228
Appears in Collections:	Articles