Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates

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DC 欄位	值	語言
dc.contributor.author	Pan, Chien-Hung	en_US
dc.contributor.author	Chang, Chia-Hao	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:23:06Z	-
dc.date.available	2014-12-08T15:23:06Z	-
dc.date.issued	2012-07-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16250	-
dc.description.abstract	The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.	en_US
dc.language.iso	en_US	en_US
dc.subject	InP-based	en_US
dc.subject	midinfrared lasers	en_US
dc.subject	optically pumped	en_US
dc.subject	type-II "W" type quantum wells	en_US
dc.title	Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	13	en_US
dc.citation.epage	1145	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000304855400008	-
dc.citation.woscount	5	-
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