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dc.contributor.authorChen, Hsuan-Anen_US
dc.contributor.authorShih, Tung-Chuanen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.date.accessioned2015-07-21T08:28:58Z-
dc.date.available2015-07-21T08:28:58Z-
dc.date.issued2015-02-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2014.2367515en_US
dc.identifier.urihttp://hdl.handle.net/11536/124359-
dc.description.abstractIn-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 mu m, but also enhances the optical response from GaAs.en_US
dc.language.isoen_USen_US
dc.subjectIn-plane gate transistorsen_US
dc.subjectInAs quantum dotsen_US
dc.titleLong-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2014.2367515en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume27en_US
dc.citation.spage261en_US
dc.citation.epage263en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000349190700010en_US
dc.citation.woscount0en_US
Appears in Collections:Articles