標題: | Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots |
作者: | Liao, Yu-An Chao, Yi-Kai Chang, Shu-Wei Chang, Wen-Hao Chyi, Jen-Inn Lin, Shih-Yen 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
公開日期: | 30-九月-2013 |
摘要: | We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4824067 http://hdl.handle.net/11536/23019 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4824067 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 103 |
Issue: | 14 |
結束頁: | |
顯示於類別: | 期刊論文 |