完整後設資料紀錄
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dc.contributor.authorHu, Sheng-Yaoen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorWeng, Yu-Hsiangen_US
dc.date.accessioned2015-07-21T08:28:00Z-
dc.date.available2015-07-21T08:28:00Z-
dc.date.issued2015-07-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2015.01.311en_US
dc.identifier.urihttp://hdl.handle.net/11536/124429-
dc.description.abstractTernary alloys of ZnMgO samples with different magnesium contents have been grown by molecular beam epitaxy on the sapphire substrates. Room temperature photoluminescence energy of ZnMgO shifted as high as 3.677 eV by increasing Mg contents corresponding to the higher Urbach average localization energy which indicates more randomness in the alloys with higher Mg contents. XRD results are also verified that the c-axis length decreases as the increasing Mg contents linking to the increased tensile stress produced by the Mg atoms. Raman spectra analyzed by the spatial correlation model to describe that the linewidth Gamma is decreased but the correlation length L is increased as the increasing of Mg contents. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnMgOen_US
dc.subjectPhotoluminescenceen_US
dc.subjectXRDen_US
dc.subjectRamanen_US
dc.titleEffects of magnesium contents in ZnMgO ternary alloys grown by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2015.01.311en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume636en_US
dc.citation.spage81en_US
dc.citation.epage84en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000351836600013en_US
dc.citation.woscount0en_US
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