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dc.contributor.authorWang, H. H.en_US
dc.contributor.authorTian, J. S.en_US
dc.contributor.authorChen, C. Y.en_US
dc.contributor.authorHuang, H. H.en_US
dc.contributor.authorYeh, Y. C.en_US
dc.contributor.authorDeng, P. Y.en_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorWu, Y. R.en_US
dc.contributor.authorHe, J. H.en_US
dc.date.accessioned2019-04-03T06:37:56Z-
dc.date.available2019-04-03T06:37:56Z-
dc.date.issued2015-04-01en_US
dc.identifier.issn1943-0655en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JPHOT.2015.2415672en_US
dc.identifier.urihttp://hdl.handle.net/11536/124462-
dc.description.abstractThe near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (rho = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [11 (2) over bar0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.en_US
dc.language.isoen_USen_US
dc.subjectOptical filmsen_US
dc.subjectphotoluminescenceen_US
dc.subjectoptical polarizationen_US
dc.subjectstrainen_US
dc.subjectII-VI semiconductor materialsen_US
dc.titleThe Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnOen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JPHOT.2015.2415672en_US
dc.identifier.journalIEEE PHOTONICS JOURNALen_US
dc.citation.volume7en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000352274100021en_US
dc.citation.woscount2en_US
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