完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, H. H. | en_US |
dc.contributor.author | Tian, J. S. | en_US |
dc.contributor.author | Chen, C. Y. | en_US |
dc.contributor.author | Huang, H. H. | en_US |
dc.contributor.author | Yeh, Y. C. | en_US |
dc.contributor.author | Deng, P. Y. | en_US |
dc.contributor.author | Chang, L. | en_US |
dc.contributor.author | Chu, Y. H. | en_US |
dc.contributor.author | Wu, Y. R. | en_US |
dc.contributor.author | He, J. H. | en_US |
dc.date.accessioned | 2019-04-03T06:37:56Z | - |
dc.date.available | 2019-04-03T06:37:56Z | - |
dc.date.issued | 2015-04-01 | en_US |
dc.identifier.issn | 1943-0655 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JPHOT.2015.2415672 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124462 | - |
dc.description.abstract | The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (rho = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [11 (2) over bar0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Optical films | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | optical polarization | en_US |
dc.subject | strain | en_US |
dc.subject | II-VI semiconductor materials | en_US |
dc.title | The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JPHOT.2015.2415672 | en_US |
dc.identifier.journal | IEEE PHOTONICS JOURNAL | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000352274100021 | en_US |
dc.citation.woscount | 2 | en_US |
顯示於類別: | 期刊論文 |