標題: The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
作者: Meng, CC
Su, JY
Tsou, BC
Huang, GW
電信工程研究所
Institute of Communications Engineering
關鍵字: BJT;selectively implanted collector
公開日期: 1-四月-2006
摘要: A selectively ion-implanted collector (SIC) is implemented in a 0.8 mu m BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f(t) and f(max) than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f(t) is 7.8GHz and f(max) is 9.5 GHz for the SIC BJT device while the f(t) is 7.2 GHz and f(max) is 4.5 GHz for the FIC BJT device when biased at V-ce =3.6 V and J(c) = 0.07 mA/mu m(2). The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.
URI: http://dx.doi.org/10.1093/ietele/e89-c.4.520
http://hdl.handle.net/11536/12447
ISSN: 0916-8524
DOI: 10.1093/ietele/e89-c.4.520
期刊: IEICE TRANSACTIONS ON ELECTRONICS
Volume: E89C
Issue: 4
起始頁: 520
結束頁: 523
顯示於類別:期刊論文