標題: Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High-k/Metal Gate CMOS Process
作者: Lin, Chun-Yu
Chang, Pin-Hsin
Chang, Rong-Kun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);pMOS;silicon-controlled rectifier (SCR)
公開日期: 1-四月-2015
摘要: A pMOS device with an embedded silicon-controlled rectifier to improve its electrostatic discharge (ESD) robustness has been proposed and implemented in a 28-nm high-k/metal gate CMOS process. An additional p-type ESD implantation layer was added into the pMOS to realize the proposed device. The experimental results show that the proposed device has the advantages of high ESD robustness, low holding voltage, low parasitic capacitance, and good latchup immunity. With better performances, the proposed device was more suitable for ESD protection in a sub-50-nm CMOS process.
URI: http://dx.doi.org/10.1109/TED.2015.2396946
http://hdl.handle.net/11536/124476
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2396946
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 62
起始頁: 1349
結束頁: 1352
顯示於類別:期刊論文