Title: | Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High-k/Metal Gate CMOS Process |
Authors: | Lin, Chun-Yu Chang, Pin-Hsin Chang, Rong-Kun 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Electrostatic discharge (ESD);pMOS;silicon-controlled rectifier (SCR) |
Issue Date: | 1-Apr-2015 |
Abstract: | A pMOS device with an embedded silicon-controlled rectifier to improve its electrostatic discharge (ESD) robustness has been proposed and implemented in a 28-nm high-k/metal gate CMOS process. An additional p-type ESD implantation layer was added into the pMOS to realize the proposed device. The experimental results show that the proposed device has the advantages of high ESD robustness, low holding voltage, low parasitic capacitance, and good latchup immunity. With better performances, the proposed device was more suitable for ESD protection in a sub-50-nm CMOS process. |
URI: | http://dx.doi.org/10.1109/TED.2015.2396946 http://hdl.handle.net/11536/124476 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2015.2396946 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 62 |
Begin Page: | 1349 |
End Page: | 1352 |
Appears in Collections: | Articles |