Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed

doi:10.1149/2.0041504ssl

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chen, Yi-Jung	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.date.accessioned	2015-07-21T08:28:27Z	-
dc.date.available	2015-07-21T08:28:27Z	-
dc.date.issued	2015-01-01	en_US
dc.identifier.issn	2162-8742	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/2.0041504ssl	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124600	-
dc.description.abstract	We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional time step in the measurement and must be considered. (C) The Author(s) 2015. Published by ECS. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.0041504ssl	en_US
dc.identifier.journal	ECS SOLID STATE LETTERS	en_US
dc.citation.spage	Q10	en_US
dc.citation.epage	Q12	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000350340800003	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Articles