標題: | Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers |
作者: | Zhan, Runze Dong, Chengyuan Yang, Bo-Ru Shieh, Han-Ping D. 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 1-九月-2013 |
摘要: | A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/JJAP.52.090205 http://hdl.handle.net/11536/22521 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.52.090205 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 52 |
Issue: | 9 |
結束頁: | |
顯示於類別: | 期刊論文 |