標題: | Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films |
作者: | Krishnan, P. S. Sankara Rama Aguiar, Jeffery A. Ramasse, Q. M. Kepaptsoglou, D. M. Liang, W. -I. Chu, Y. -H. Browning, N. D. Munroe, P. Nagarajan, V. 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-一月-2015 |
摘要: | Strain engineering of epitaxial ferroelectrics has emerged as a powerful method to tailor the electromechanical response of these materials, although the effect of strain at the atomic scale and the interplay between lattice displacements and electronic structure changes are not yet fully understood. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we systematically probe the role of epitaxial strain in mixed phase bismuth ferrite thin films. Electron energy loss O K and Fe L-2,L-3 edge spectra acquired across the rhombohedral (R)-tetragonal (T) phase boundary reveal progressive, and systematic, changes in electronic structure going from one phase to the other. The comparison of the acquired spectra with theoretical simulations using DFT suggests a breakage in the structural symmetry across the boundary due to the simultaneous presence of increasing epitaxial strain and off-axial symmetry in the T phase. This implies that the imposed epitaxial strain plays a significant role in not only changing the crystal-field geometry, but also the bonding environment surrounding the central iron cation at the interface thus providing new insights and a possible link to understand how the imposed strain could perturb magnetic ordering in the T phase BFO. |
URI: | http://dx.doi.org/10.1039/c4tc02064b http://hdl.handle.net/11536/124601 |
ISSN: | 2050-7526 |
DOI: | 10.1039/c4tc02064b |
期刊: | JOURNAL OF MATERIALS CHEMISTRY C |
起始頁: | 1835 |
結束頁: | 1845 |
顯示於類別: | 期刊論文 |