標題: | Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique |
作者: | Chiu, Ching-Hsueh Lin, Chien-Chung Tu, Po-Min Huang, Shih-Cheng Tu, Chia-Cheng Li, Jin-Chai Li, Zhen-Yu Uen, Wu-Yih Zan, Hsiao-Wen Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Chang, Chun-Yen 光電系統研究所 電子工程學系及電子研究所 光電工程學系 Institute of Photonic System Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | Internal quantum efficiency;metal-organic chemical vapor deposition;nanoscale epitaxial lateral overgrowth;ultraviolet light emitting diodes |
公開日期: | 1-二月-2012 |
摘要: | In this paper, a high quality ultraviolet lightemitting diodes (UV-LEDs) at 375 nm was developed using a heavy Si-doping technique with metal organic chemical vapor deposition. By using high-resolution X-ray diffraction, the full width at half-maximum of the rocking curve shows that the GaN film inserting a heavily Si-doped GaN layer (Si-HDL) had high crystalline quality. From the transmission electron microscopy image, the threading dislocation density was decreased after inserting a Si-HDL between undoped and n-doped GaN layers by nanoscale epitaxial lateral overgrowth. As a result, a much smaller reverse current and a higher light output were achieved. The improvement of light output at an injection current of 20 mA was enhanced by 40%. Therefore, we can use an in-situ nano pattern without complex photolithography and etching process and improve the internal quantum efficiency of UV-LEDs. |
URI: | http://dx.doi.org/10.1109/JQE.2011.2170553 http://hdl.handle.net/11536/124610 |
ISSN: | 0018-9197 |
DOI: | 10.1109/JQE.2011.2170553 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 48 |
起始頁: | 175 |
結束頁: | 181 |
顯示於類別: | 期刊論文 |