標題: | Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer |
作者: | Huang, Shih-Cheng Shen, Kun-Ching Tu, Po-Min Wuu, Dong-Sing Kuo, Hao-Chung Horng, Ray-Hua 光電工程學系 Department of Photonics |
關鍵字: | Light emitting diodes;Si-doping |
公開日期: | 1-一月-2012 |
摘要: | High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al0.02Ga0.98N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mmx1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency. |
URI: | http://dx.doi.org/10.1117/12.909580 http://hdl.handle.net/11536/146325 |
ISBN: | 978-0-8194-8905-0 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.909580 |
期刊: | GALLIUM NITRIDE MATERIALS AND DEVICES VII |
Volume: | 8262 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |