標題: Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer
作者: Huang, Shih-Cheng
Shen, Kun-Ching
Tu, Po-Min
Wuu, Dong-Sing
Kuo, Hao-Chung
Horng, Ray-Hua
光電工程學系
Department of Photonics
關鍵字: Light emitting diodes;Si-doping
公開日期: 1-一月-2012
摘要: High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al0.02Ga0.98N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mmx1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.
URI: http://dx.doi.org/10.1117/12.909580
http://hdl.handle.net/11536/146325
ISBN: 978-0-8194-8905-0
ISSN: 0277-786X
DOI: 10.1117/12.909580
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES VII
Volume: 8262
起始頁: 0
結束頁: 0
顯示於類別:會議論文


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