標題: Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique
作者: Chiu, Ching-Hsueh
Lin, Chien-Chung
Tu, Po-Min
Huang, Shih-Cheng
Tu, Chia-Cheng
Li, Jin-Chai
Li, Zhen-Yu
Uen, Wu-Yih
Zan, Hsiao-Wen
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
光電工程學系
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Internal quantum efficiency;metal-organic chemical vapor deposition;nanoscale epitaxial lateral overgrowth;ultraviolet light emitting diodes
公開日期: 1-Feb-2012
摘要: In this paper, a high quality ultraviolet lightemitting diodes (UV-LEDs) at 375 nm was developed using a heavy Si-doping technique with metal organic chemical vapor deposition. By using high-resolution X-ray diffraction, the full width at half-maximum of the rocking curve shows that the GaN film inserting a heavily Si-doped GaN layer (Si-HDL) had high crystalline quality. From the transmission electron microscopy image, the threading dislocation density was decreased after inserting a Si-HDL between undoped and n-doped GaN layers by nanoscale epitaxial lateral overgrowth. As a result, a much smaller reverse current and a higher light output were achieved. The improvement of light output at an injection current of 20 mA was enhanced by 40%. Therefore, we can use an in-situ nano pattern without complex photolithography and etching process and improve the internal quantum efficiency of UV-LEDs.
URI: http://dx.doi.org/10.1109/JQE.2011.2170553
http://hdl.handle.net/11536/124610
ISSN: 0018-9197
DOI: 10.1109/JQE.2011.2170553
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 48
起始頁: 175
結束頁: 181
Appears in Collections:Articles