標題: Photo-detection characteristics of In-Zn-O/SiOx/n-Si hetero-junctions
作者: Fang, Hau-Wei
Hsieh, Tsung-Eong
Juang, Jenh-Yih
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Photodetector;Indium zinc oxide;Semiconductor-insulator-semiconductor hetero-junction structure;Pulsed laser deposition
公開日期: 1-Aug-2015
摘要: A layer of indium zinc oxide (IZO) was deposited on the n-type Si substrate clad with a thin thermally grown SiOx layer by pulsed laser deposition to form the semiconductor-insulator-semiconductor (SIS) hetero-junction which exhibits substantial photo-induced responses. Investigation on the IZO layer deposited at various temperatures indicated that IZO film grown at 250 degrees C possesses a resistivity of 4.9 x 10(-4) Omega cm with the transmittance exceeding 80% in the wavelength range between near infrared to ultraviolet light. The photodetection device made of the SIS hetero-junction structure was found to exhibit the photoresponse (R) of 35 AW(-1) and 6.15 AW(-1) with a quick photo-response time less than 80 ms under the illumination of visible light and ultraviolet light, respectively. The underlying mechanism for such a unique characteristic was attributed to the suppression of majority carrier tunneling resulted from the Schottky barrier established at the SIS interfaces. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2015.03.169
http://hdl.handle.net/11536/124621
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2015.03.169
期刊: APPLIED SURFACE SCIENCE
Volume: 345
起始頁: 295
結束頁: 300
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