Hopping conduction properties of the Sn:SiO (X) thin-film resistance random access memory devices induced by rapid temperature annealing procedure

Abstract

Bipolar switching properties and electrical conduction mechanism in Sn:SiO (X) thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn:SiO (X) thin-film RRAM devices were investigated and discussed. In addition, the improvement qualities and electrical switching properties of the RTA-treated Sn:SiO (X) thin-film RRAM devices were carried out XPS, FT-IR, and IV measurement. The ohmic conduction with metal-like behavior and hopping conduction dependent activation energy properties by the Arrhenius plot equation in LRS of the Sn:SiO (X) thin films was investigated. The activation energy and hopping distance for the RTA-treated thin films were found to be 0.018 eV and 1.1 nm, respectively. For the compatibility with the IC processes, the RTA treatment was a promising method for the Sn:SiO (X) thin-film RRAM nonvolatile memory applications.