標題: | Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices |
作者: | Chang, Kuan-Chang Zhang, Rui Chang, Ting-Chang Tsai, Tsung-Ming Lou, J. C. Chen, Jung-Hui Young, Tai-Fa Chen, Min-Chen Yang, Ya-Liang Pan, Yin-Chih Chang, Geng-Wei Chu, Tian-Jian Shih, Chih-Cheng Chen, Jian-Yu Pan, Chih-Hung Su, Yu-Ting Syu, Yong-En Tai, Ya-Hsiang Sze, Simon M. 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | conduction;graphene oxide;hopping;redox reaction;resistance random access memory (RRAM) |
公開日期: | 1-五月-2013 |
摘要: | In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model. |
URI: | http://dx.doi.org/10.1109/LED.2013.2250899 http://hdl.handle.net/11536/21910 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2250899 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 5 |
起始頁: | 677 |
結束頁: | 679 |
顯示於類別: | 期刊論文 |