Vertical organic transistors withstanding high voltage bias

Abstract

Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15V was obtained. An on/off current ratio of 10(3)-10(4) and an output current density of 5-10 mA/cm(2) were achieved. (c) 2015 AIP Publishing LLC.