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dc.contributor.authorKo, T. Y.en_US
dc.contributor.authorSun, K. W.en_US
dc.date.accessioned2015-07-21T08:28:44Z-
dc.date.available2015-07-21T08:28:44Z-
dc.date.issued2015-04-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201510011en_US
dc.identifier.urihttp://hdl.handle.net/11536/124704-
dc.description.abstractDynamic scanning photocurrent microscopy was applied to Sb2Se3 crystalline single nanowires (NWs) to analyze their transient photocurrent responses. These NWs exhibited switching behavior with rapid rise and decay times upon illumination by laser pulses. The estimated spectral responsivity and external quantum efficiency for a freshly-prepared NW at a bias voltage of 0.3 V and excitation wavelength of 488 nm were similar to 16.9 mA/W and similar to 42.9%, respectively. A pyroelectric-like current transient was observed with reduced spectral responsivity when nonpolar Sb2Se3 single-crystalline NWs were excited by laser pulses. Because Sb2Se3 NWs were non-pyroelectric or ferroelectric, the pyroelectric-like current could possibly be attributed to temperature dependent nonlinear space-charge distributions. Defects produced by the external electrical bias generated and re-distributed space charges in the NWs. As a result, the temperature dependent inhomogeneous electric field led to nonlinear expansions or contractions of the lattice (electrostriction) that can produce pyroelectric current. We obtained a lower bound of equivalent pyroelectric coefficient a >= 60.09 mu C/m(2) K from these materials by fitting the electrical transients. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjectSb2Se3en_US
dc.subjectnanowiresen_US
dc.subjectpyroelectric coefficientsen_US
dc.subjectphotocurrent microscopyen_US
dc.subjectelectrostrictionen_US
dc.subjectspectral responsivityen_US
dc.titleTrapped charge-induced pyroelectric-like transient response in single high-resistivity Sb2Se3 nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.201510011en_US
dc.identifier.journalPhysica Status Solidi-Rapid Research Lettersen_US
dc.citation.spage259en_US
dc.citation.epage263en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000353409700010en_US
dc.citation.woscount0en_US
Appears in Collections:Articles