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dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorLin, Bing-Chengen_US
dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLiao, Yu-Kuangen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2019-04-03T06:37:50Z-
dc.date.available2019-04-03T06:37:50Z-
dc.date.issued2015-03-05en_US
dc.identifier.issn1947-7988en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.JPE.5.057604en_US
dc.identifier.urihttp://hdl.handle.net/11536/124710-
dc.description.abstractCrack-free GaN-based light-emitting diodes (LEDs) were grown on 150-mm-diameter Si substrates by using low-pressure metal-organic chemical vapor deposition. The relationship between the LED devices and the thickness of quantum barriers (QBs) was investigated. The crystal quality and surface cracking of GaN-on-Si were greatly improved by an AlxGa1-xN buffer layer composed of graded Al. The threading dislocation density of the GaN-on-Si LEDs was reduced to < 7 x 10(8) cm(-2), yielding LEDs with high internal quantum efficiency. Simulation results indicated that reducing the QB thickness improved the carrier injection rate and distribution, thereby improving the droop behavior of the LEDs. LEDs featuring 6-nm-thick QBs exhibited the lowest droop behavior. However, the experimental results showed an unanticipated phenomenon, namely that the peak external quantum efficiency (EQE) and light output power (LOP) gradually decreased with a decreasing QB thickness. In other words, the GaN-on-Si LEDs with 8-nm-thick QBs exhibited low droop behavior and yielded a good peak EQE and LOP, achieving a 22.9% efficiency droop and 54.6% EQE. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diodesen_US
dc.subjectGaN-on-Sien_US
dc.subjectdroop behavior improvementen_US
dc.subjectthin barrieren_US
dc.subjectexternal quantum efficiencyen_US
dc.titleEfficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.JPE.5.057604en_US
dc.identifier.journalJOURNAL OF PHOTONICS FOR ENERGYen_US
dc.citation.volume5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000352845400001en_US
dc.citation.woscount3en_US
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