標題: | Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers |
作者: | Chen, Bo-Chun Chang, Chun-Yen Fu, Yi-Keng Huang, Kai-Feng Lu, Yu-Hsuan Su, Yan-Kuin 電子物理學系 Department of Electrophysics |
關鍵字: | Efficiency droop;internal quantum efficiency;light-emitting diodes (LEDs) |
公開日期: | 15-十一月-2011 |
摘要: | In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current. |
URI: | http://dx.doi.org/10.1109/LPT.2011.2166540 http://hdl.handle.net/11536/14650 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2011.2166540 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 23 |
Issue: | 22 |
起始頁: | 1682 |
結束頁: | 1684 |
顯示於類別: | 期刊論文 |