Dopant profile engineering by near-infrared femtosecond laser activation

Abstract

Femtosecond laser annealing (FLA) was employed for activation of phosphorus (P)- and boron (B)-implanted silicons with negligible dopant diffusion. Preamorphizing implantation is not required. We found that the dopant profiles in FLA-activated samples essentially duplicate those of as-implanted ones even for junctions as deep as 100 nm below the surface. The measured sheet resistances and activation efficiencies of P- and B-implanted samples were in the range of 100-400 Omega/square and 28%-35%, respectively. Moreover, thermal-energy-assisted dopant diffusion by heating was observed for substrate temperature as low as 100 degrees C. The shallow activated-depth feature associated with FLA reduces the separation between end-of-range defects and high-concentration portion of dopants. This generates a steep interstitial gradient responsible for observed B and P uphill diffusions at a depth of about 60 nm below the surface. (c) 2006 American Institute of Physics.