完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Cheng-En | en_US |
dc.contributor.author | Tsai, Cheng-Wei | en_US |
dc.contributor.author | Pei, Zingway | en_US |
dc.contributor.author | Lin, Tsung-Wu | en_US |
dc.contributor.author | Chang, Chen-Shiung | en_US |
dc.contributor.author | Chien, Forest Shih-Sen | en_US |
dc.date.accessioned | 2015-07-21T08:27:41Z | - |
dc.date.available | 2015-07-21T08:27:41Z | - |
dc.date.issued | 2015-07-01 | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/48/25/255103 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124762 | - |
dc.description.abstract | Solution-processable graphene oxide (GO) ultrathin films were introduced as anode interfacial layers (AILs) for polymer solar cells (PSCs). The photovoltaic performance of PSCs containing thermal-and UV-treated GO was comparable to that of PSCs with conventional poly(3,4-ethyledioxythiphene): poly(styrenesulfonate) AILs. UV treatment induced the surface activation of GO; an increase in the work function of UV-treated GO improved the energy band alignment at the GO/poly(3-hexylthiophene) interface, which accounted for the efficient hole collection and photovoltaic performance of PSCs with treated GO. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | polymer solar cells | en_US |
dc.subject | graphene oxide | en_US |
dc.subject | anode interfacial layer | en_US |
dc.subject | hole collection | en_US |
dc.title | UV-treated graphene oxide as anode interfacial layers for P3HT: PCBM solar cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0022-3727/48/25/255103 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 25 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000355233600005 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |