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dc.contributor.authorCheng, Cheng-Enen_US
dc.contributor.authorTsai, Cheng-Weien_US
dc.contributor.authorPei, Zingwayen_US
dc.contributor.authorLin, Tsung-Wuen_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.contributor.authorChien, Forest Shih-Senen_US
dc.date.accessioned2015-07-21T08:27:41Z-
dc.date.available2015-07-21T08:27:41Z-
dc.date.issued2015-07-01en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/48/25/255103en_US
dc.identifier.urihttp://hdl.handle.net/11536/124762-
dc.description.abstractSolution-processable graphene oxide (GO) ultrathin films were introduced as anode interfacial layers (AILs) for polymer solar cells (PSCs). The photovoltaic performance of PSCs containing thermal-and UV-treated GO was comparable to that of PSCs with conventional poly(3,4-ethyledioxythiphene): poly(styrenesulfonate) AILs. UV treatment induced the surface activation of GO; an increase in the work function of UV-treated GO improved the energy band alignment at the GO/poly(3-hexylthiophene) interface, which accounted for the efficient hole collection and photovoltaic performance of PSCs with treated GO.en_US
dc.language.isoen_USen_US
dc.subjectpolymer solar cellsen_US
dc.subjectgraphene oxideen_US
dc.subjectanode interfacial layeren_US
dc.subjecthole collectionen_US
dc.titleUV-treated graphene oxide as anode interfacial layers for P3HT: PCBM solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/48/25/255103en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue25en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000355233600005en_US
dc.citation.woscount0en_US
Appears in Collections:Articles