標題: GaSb-based mid infrared photonic crystal surface emitting lasers
作者: Pan, Chien Hung
Lin, Chien Hung
Chang, Ting Yuan
Lu, Tien Chang
Lee, Chien Ping
電子工程學系及電子研究所
光電工程學系
奈米科技中心
光電工程研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Center for Nanoscience and Technology
Institute of EO Enginerring
公開日期: 4-May-2015
摘要: We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at lambda(lasing) similar to 2.3 mu m, had a temperature insensitive line width of 0.3nm, and a threshold power density (P-th) similar to 0.3KW/cm(2) at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.23.011741
http://hdl.handle.net/11536/124822
ISSN: 1094-4087
DOI: 10.1364/OE.23.011741
期刊: OPTICS EXPRESS
Volume: 23
Issue: 9
起始頁: 11741
結束頁: 11747
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