完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Hung-Cheng | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Chao, Yu-Chiang | en_US |
dc.contributor.author | Chang, Ming-Yu | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.date.accessioned | 2015-07-21T08:29:40Z | - |
dc.date.available | 2015-07-21T08:29:40Z | - |
dc.date.issued | 2015-05-01 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/30/5/054003 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124833 | - |
dc.description.abstract | In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | vertical channel | en_US |
dc.subject | organic transistor | en_US |
dc.subject | space-charge-limited transistor | en_US |
dc.subject | solution process | en_US |
dc.title | Review of a solution-processed vertical organic transistor as a solid-state vacuum tube | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0268-1242/30/5/054003 | en_US |
dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 30 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000355212600003 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |