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dc.contributor.authorLin, Hung-Chengen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorChang, Ming-Yuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2015-07-21T08:29:40Z-
dc.date.available2015-07-21T08:29:40Z-
dc.date.issued2015-05-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/30/5/054003en_US
dc.identifier.urihttp://hdl.handle.net/11536/124833-
dc.description.abstractIn this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectvertical channelen_US
dc.subjectorganic transistoren_US
dc.subjectspace-charge-limited transistoren_US
dc.subjectsolution processen_US
dc.titleReview of a solution-processed vertical organic transistor as a solid-state vacuum tubeen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/30/5/054003en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume30en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000355212600003en_US
dc.citation.woscount0en_US
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