標題: InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes
作者: Li, Yun-Jing
Chang, Jet-Rung
Chang, Shih-Pang
Sou, Kuok-Pan
Cheng, Yuh-Jen
Kuo, Hao-Chung
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-四月-2015
摘要: We report the study of an electrically driven nanopyramid-on-pillar green light-emitting diode (LED). The pyramid-on-pillar nanostructure was fabricated by top-down etching from a GaN template, followed by epitaxial regrowth. High-In-content InGaN/GaN multiple quantum wells (MQWs) were grown on semipolar pyramid and nonpolar pillar surfaces. The measured radiative lifetimes of MQWs on these two surfaces were 2 orders of magnitude shorter than that of a conventional c-plane (0001) MQW owing to their lower polarization field. Electrical injection performance was also demonstrated and discussed. (C) 2015 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.8.042101
http://hdl.handle.net/11536/124845
ISSN: 1882-0778
DOI: 10.7567/APEX.8.042101
期刊: APPLIED PHYSICS EXPRESS
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