Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts

doi:10.1039/c5ce00655d

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chiou, Chien-Jyun	en_US
dc.contributor.author	Chiu, Shao-Pin	en_US
dc.contributor.author	Lin, Juhn-Jong	en_US
dc.contributor.author	Chou, Yi-Chia	en_US
dc.date.accessioned	2015-07-21T08:28:53Z	-
dc.date.available	2015-07-21T08:28:53Z	-
dc.date.issued	2015-01-01	en_US
dc.identifier.issn	1466-8033	en_US
dc.identifier.uri	http://dx.doi.org/10.1039/c5ce00655d	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124857	-
dc.description.abstract	We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moire fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.	en_US
dc.language.iso	en_US	en_US
dc.title	Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1039/c5ce00655d	en_US
dc.identifier.journal	CRYSTENGCOMM	en_US
dc.citation.volume	17	en_US
dc.citation.issue	23	en_US
dc.citation.spage	4276	en_US
dc.citation.epage	4280	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000355734400003	en_US
dc.citation.woscount	0	en_US
顯示於類別：	期刊論文