標題: | N-type Schottky barrier source/drain MOSFET using ytterbium silicide |
作者: | Zhu, SY Chen, JD Li, MF Lee, SJ Singh, J Zhu, CX Du, AY Tung, CH Chin, A Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | MOSFET;rare earth (RE) metal;Schottky;silicide |
公開日期: | 1-八月-2004 |
摘要: | Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions. |
URI: | http://dx.doi.org/10.1109/LED.2004.831582 http://hdl.handle.net/11536/26516 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.831582 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 8 |
起始頁: | 565 |
結束頁: | 567 |
顯示於類別: | 期刊論文 |