標題: N-type Schottky barrier source/drain MOSFET using ytterbium silicide
作者: Zhu, SY
Chen, JD
Li, MF
Lee, SJ
Singh, J
Zhu, CX
Du, AY
Tung, CH
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFET;rare earth (RE) metal;Schottky;silicide
公開日期: 1-Aug-2004
摘要: Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.
URI: http://dx.doi.org/10.1109/LED.2004.831582
http://hdl.handle.net/11536/26516
ISSN: 0741-3106
DOI: 10.1109/LED.2004.831582
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 8
起始頁: 565
結束頁: 567
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