具有鐿金屬矽化物之蕭特基能障金氧半場效電晶體的應用

Abstract

鐿金屬矽化物被用來製成蕭特基能障源/汲極的N通道金氧半場效電晶體，其中包含了氧化鑭鋁的閘極介電層以及氮化鉭的金屬閘極，此元件製程是在低溫下進行，為蕭特基能障在源/汲極的電晶體技術下的最佳選擇，其歸因於它與其它金屬矽化物的蕭特基接面相較之下，有較低的電子能障與較好的薄膜接面型態。 有鑒於未來對於N通道金氧半場效電晶體上矽、鍺及三五族材料在通道上的製作，本篇論文探討了兩項低溫製程上的重大發展，其中發現了鐿金屬在p型矽基板上的蕭特基接面以30秒600度的快速高溫退火之後，有著極佳的整流特性、較低的有效電子能障高度、較低的片電阻以及較活潑的原子接面，這些特性非常適合作為電晶體的源/汲極。而金氧半電容是以雙電子槍蒸鍍的氧化鑭鋁介電層以及物理氣相沉積出的氮化鉭電極所組成，此電容在400度的快速高溫退火之後有著有效氧化層厚度為1.48奈米、閘極漏電流為3.18×10-2安培/平方公分的優良電容-電壓及電流-電壓特性。儘管蕭特基能障金氧半場效電晶體在各種的分析之下仍然失敗了，但我們希望這些分析在未來會是有用處的。

Ytterbium silicide was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, which is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the LaAlO3 (LAO) gate dielectric, and TaN metal gate. The YbSi2-x silicided N-SSDT is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other metal silicide Schottky junctions. This thesis explores two low temperature technological developments related to future n-MOSFETs using silicon, germanium, or III-V semiconductors as channel materials. It was found that Yb/p-Si Schottky contact with rapid thermal annealing (RTA) at 600℃ for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with p-Si. These properties are suitable for source/drain (S/D) formation in n-MOSFETs. MOS capacitors were fabricated by dual E-gun deposition of LaAlO3 dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved C-V and J-V characteristics with equivalent-oxide-thickness (EOT) = 1.48nm, gate leakage currents 3.18×10-2 A/cm2 for 400℃ RTA treated samples at Vfb-1V were achieved. The Schottky barrier MOSFETs are pitifully failed with various analyses. We hope that these analyses will be useful in the future.