蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析

Title:	蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析 Fabrication and Characterization of SOI Schottky Barrier MOSFET
Authors:	黃調元 TIAO-YUANHUANG 國立交通大學電子工程學系
Keywords:	蕭特基能障;絕緣矽;金氧半導體場效電晶體;Schotty barrier;Silicon-on-insulator (SOI);MOSFET
Issue Date:	2001
Gov't Doc #:	NSC90-2215-E009-080
URI:	http://hdl.handle.net/11536/96752 https://www.grb.gov.tw/search/planDetail?id=665749&docId=126386
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

APA	黃., & T. (2001). 蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析. https://www.grb.gov.tw/search/planDetail?id=665749&docId=126386.
Bibtex	@article{2001, title={蕭特基能障金氧半電晶體元件研製與理論分析---子計畫II：蕭特基能障SOI金氧半電晶體元件研製與分析}, author={黃調元 and TIAO-YUANHUANG}, journal={https://www.grb.gov.tw/search/planDetail?id=665749&docId=126386}, year={2001}, url={https://ir.lib.nycu.edu.tw/handle/11536/96752}, }