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dc.contributor.authorLin, Kuan-Yuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLin, Chun-Yuen_US
dc.date.accessioned2015-07-21T08:31:30Z-
dc.date.available2015-07-21T08:31:30Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-3432-4en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/124893-
dc.description.abstractA biomedical stimulator with four high-voltage-tolerant output channels, combined with on-chip positive high voltage generator, is proposed. For the purpose of integration with other circuit blocks into a system-on-chip (SoC) for cochlear implant biomedical applications, this design has been realized with the 1.8-V/3.3-V transistors in a 0.18-mu m CMOS process. This stimulator only needs one single supply voltage of 1.8 V, but the maximum stimulation voltage can be as high as 7 V. The dynamic bias technique and stacked MOS configuration are used to implement this stimulator in the low-voltage CMOS process, without causing the issues of electrical overstress and gate-oxide reliability during circuit operation.en_US
dc.language.isoen_USen_US
dc.titleA High-Voltage-Tolerant Stimulator Realized in the Low-Voltage CMOS Process for Cochlear Implanten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)en_US
dc.citation.spage237en_US
dc.citation.epage240en_US
dc.contributor.department生醫電子轉譯研究中心zh_TW
dc.contributor.departmentBiomedical Electronics Translational Research Centeren_US
dc.identifier.wosnumberWOS:000346488600058en_US
dc.citation.woscount0en_US
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