High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, H. H.	en_US
dc.contributor.author	Chiou, P.	en_US
dc.contributor.author	Chiu, Y. C.	en_US
dc.contributor.author	Yen, S. S.	en_US
dc.contributor.author	Chang, C. Y.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.date.accessioned	2015-07-21T08:31:12Z	-
dc.date.available	2015-07-21T08:31:12Z	-
dc.date.issued	2014-01-01	en_US
dc.identifier.isbn	978-1-4799-5406-3	en_US
dc.identifier.issn	1548-3770	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124922	-
dc.description.abstract		en_US
dc.language.iso	en_US	en_US
dc.title	High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)	en_US
dc.citation.spage	107	en_US
dc.citation.epage	108	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000346309800047	en_US
dc.citation.woscount	0	en_US
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