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dc.contributor.authorHsu, Chung-Weien_US
dc.contributor.authorWan, Chia-Chenen_US
dc.contributor.authorWang, I-Tingen_US
dc.contributor.authorChen, Mei-Chinen_US
dc.contributor.authorLo, Chun-Lien_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorJang, Wen-Yuehen_US
dc.contributor.authorLin, Chen-Hsien_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2015-07-21T08:31:06Z-
dc.date.available2015-07-21T08:31:06Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-4799-2306-9en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/124957-
dc.description.abstractThe 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.en_US
dc.language.isoen_USen_US
dc.title3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Currenten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000346509500064en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper