3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Chung-Wei	en_US
dc.contributor.author	Wan, Chia-Chen	en_US
dc.contributor.author	Wang, I-Ting	en_US
dc.contributor.author	Chen, Mei-Chin	en_US
dc.contributor.author	Lo, Chun-Li	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Jang, Wen-Yueh	en_US
dc.contributor.author	Lin, Chen-Hsi	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.date.accessioned	2015-07-21T08:31:06Z	-
dc.date.available	2015-07-21T08:31:06Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-4799-2306-9	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://hdl.handle.net/11536/124957	-
dc.description.abstract	The 3D double-layer vertical RRAM with ultralow sub-mu A operating current and high self-rectifying ratio over 10(3) has been demonstrated for the first time. This Ta/TaOx/TiO2/Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.	en_US
dc.language.iso	en_US	en_US
dc.title	3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000346509500064	en_US
dc.citation.woscount	0	en_US
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