标题: | Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs |
作者: | Chen, Yu-Yu Huang, Wen-Tsung Hsu, Sheng-Chia Chang, Han-Tung Chen, Chieh-Yang Yang, Chin-Min Chen, Li-Wen Li, Yiming 資訊工程學系 Department of Computer Science |
公开日期: | 1-一月-2013 |
摘要: | In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-kappa / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations\' impact on drain induced barrier lowering (DIBL). The main findings of this work show the RDF and WKF on n-type device are larger than that of p-type one. The DIBL is dominated by the number of random dopants. |
URI: | http://hdl.handle.net/11536/124972 |
ISBN: | 978-1-4799-0675-8; 978-1-4799-0676-5 |
ISSN: | |
期刊: | 2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
起始页: | 442 |
结束页: | 445 |
显示于类别: | Conferences Paper |