标题: Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs
作者: Chen, Yu-Yu
Huang, Wen-Tsung
Hsu, Sheng-Chia
Chang, Han-Tung
Chen, Chieh-Yang
Yang, Chin-Min
Chen, Li-Wen
Li, Yiming
資訊工程學系
Department of Computer Science
公开日期: 1-一月-2013
摘要: In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-kappa / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations\' impact on drain induced barrier lowering (DIBL). The main findings of this work show the RDF and WKF on n-type device are larger than that of p-type one. The DIBL is dominated by the number of random dopants.
URI: http://hdl.handle.net/11536/124972
ISBN: 978-1-4799-0675-8; 978-1-4799-0676-5
ISSN: 
期刊: 2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始页: 442
结束页: 445
显示于类别:Conferences Paper