Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement

Title:	Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement
Authors:	Yu, Chang-Hung Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1-Jan-2013
Abstract:
URI:	http://hdl.handle.net/11536/124974
ISBN:	978-1-4799-0811-0; 978-1-4799-0812-7
ISSN:	1548-3770
Journal:	2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
Begin Page:	59
End Page:	60
Appears in Collections:	Conferences Paper