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dc.contributor.authorChen, Chieh-Yangen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChen, Yu-Yuen_US
dc.contributor.authorChang, Han-Tungen_US
dc.contributor.authorHsu, Sheng-Chiaen_US
dc.contributor.authorHuang, Wen-Tsungen_US
dc.contributor.authorYang, Chin-Minen_US
dc.contributor.authorChen, Li-Wenen_US
dc.date.accessioned2015-07-21T08:31:31Z-
dc.date.available2015-07-21T08:31:31Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-4799-0811-0; 978-1-4799-0812-7en_US
dc.identifier.issn1548-3770en_US
dc.identifier.urihttp://hdl.handle.net/11536/124975-
dc.description.abstracten_US
dc.language.isoen_USen_US
dc.titleOn Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effecten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)en_US
dc.citation.spage137en_US
dc.citation.epage138en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000347466000074en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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