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dc.contributor.authorHsueh, Sung S. -Y.en_US
dc.contributor.authorHuang, Ryan H. -M.en_US
dc.contributor.authorWen, Charles H. -P.en_US
dc.date.accessioned2015-07-21T08:31:24Z-
dc.date.available2015-07-21T08:31:24Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-3946-6en_US
dc.identifier.issn1948-3287en_US
dc.identifier.urihttp://hdl.handle.net/11536/125013-
dc.description.abstractSoft error has become one of the most critical reliability issues for nano-scaled CMOS designs. Many previous works discovered that the pulse width due to a particle strike on the device increases with temperature, but its system-level effect has not yet been investigated with statistical soft-error-rate (SER). Therefore, in this paper, a combinational circuit (c17 from ISCAS\'85) using a 45nm CMOS technology is f rst observed under different temperatures for SER. As a result, a SER increase (2.16X more) is found on c17 as the ambient temperature elevates from 25 degrees C to 125 degrees C. Second, along with growing design complexity, the operational temperatures of gates are distributed in a wide range and much higher than the ambient temperature in reality. Therefore, we are motivated to build a temperature-aware SSER analysis framework that integrates statistical cell modeling to consider the ambient temperature (T-a) and the temperature variation (T-v), simultaneously. Experimental result shows that our SSER analysis framework is highly effcient (with multiple-order speed-ups) and accurate (with only <4% errors), when compared with Monte-Carlo SPICE simulation.en_US
dc.language.isoen_USen_US
dc.titleTASSER: A Temperature-Aware Statistical Soft-Error-Rate Analysis Framework for Combinational Circuitsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 2014 FIFTEENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED 2014)en_US
dc.citation.spage529en_US
dc.citation.epage534en_US
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.identifier.wosnumberWOS:000349547600074en_US
dc.citation.woscount0en_US
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