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dc.contributor.authorLien, Nan-Chunen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorWu, Wen-Rangen_US
dc.date.accessioned2015-07-21T08:30:59Z-
dc.date.available2015-07-21T08:30:59Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-4799-1166-0en_US
dc.identifier.issn2164-1676en_US
dc.identifier.urihttp://hdl.handle.net/11536/125066-
dc.description.abstractThis work proposes a novel Dual-Port (DP) 8T SRAM operation scheme. The scheme improves the Read stability and Write-ability, and allows asynchronous operation with arbitrary clock timing skew between two ports. It facilitates high performance, low-power and low VM1N with minimum device and area overhead. Postsimulation results show almost no timing penalty for simultaneous same-row access and the performance is almost the same as that for one port operation.en_US
dc.language.isoen_USen_US
dc.titleMethod for Resolving Simultaneous Same-Row Access In Dual-Port 8T SRAM with Asynchronous Dual-Clock Operationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC)en_US
dc.citation.spage105en_US
dc.citation.epage109en_US
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000351736000014en_US
dc.citation.woscount0en_US
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