Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lien, Nan-Chun | en_US |
dc.contributor.author | Chuang, Ching-Te | en_US |
dc.contributor.author | Wu, Wen-Rang | en_US |
dc.date.accessioned | 2015-07-21T08:30:59Z | - |
dc.date.available | 2015-07-21T08:30:59Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.isbn | 978-1-4799-1166-0 | en_US |
dc.identifier.issn | 2164-1676 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/125066 | - |
dc.description.abstract | This work proposes a novel Dual-Port (DP) 8T SRAM operation scheme. The scheme improves the Read stability and Write-ability, and allows asynchronous operation with arbitrary clock timing skew between two ports. It facilitates high performance, low-power and low VM1N with minimum device and area overhead. Postsimulation results show almost no timing penalty for simultaneous same-row access and the performance is almost the same as that for one port operation. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Method for Resolving Simultaneous Same-Row Access In Dual-Port 8T SRAM with Asynchronous Dual-Clock Operation | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC) | en_US |
dc.citation.spage | 105 | en_US |
dc.citation.epage | 109 | en_US |
dc.contributor.department | 電機資訊學士班 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Undergraduate Honors Program of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000351736000014 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |