Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Chan-Shan | en_US |
dc.contributor.author | Pan, Ru-Pin | en_US |
dc.contributor.author | Pan, Ci-Ling | en_US |
dc.date.accessioned | 2019-04-03T06:47:43Z | - |
dc.date.available | 2019-04-03T06:47:43Z | - |
dc.date.issued | 2015-01-01 | en_US |
dc.identifier.isbn | 978-1-62841-474-5 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1117/12.2079324 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/125090 | - |
dc.description.abstract | We have constructed and characterized THz phase shifters based on liquid crystals (LCs) with graphene grown by chemical vapor deposition (CVD) and indium-tin-oxide nanowhiskers (ITO NWhs) as transparent conducting electrodes. A graphene-based phase shifter can achieve a phase shift of pi/2 at 1.0 THz with the operating voltage of similar to 2.2 V (rms) as opposed to similar to 5.6 V (rms) for ITO-NWhs-based phase shifter in previous work. On the other hand, 2 pi phase shift at 1.0 THz was achieved in an ITO-NWhs-based phase shifter with a multi-sandwiched structure by applying similar to 2.6 V (rms). The low operation voltage of both two kinds of phase shifters imply compatibility of both type of devices with thin-film transistor (TFT) and complementary metal-oxide-semiconductor (CMOS) technologies. The experimental results of phase shifters are in good agreement with the theoretical predictions. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Far infrared or terahertz | en_US |
dc.subject | phase shift | en_US |
dc.subject | liquid-crystal devices | en_US |
dc.subject | spectroscopy | en_US |
dc.subject | terahertz | en_US |
dc.subject | transparent conductive coatings | en_US |
dc.title | Liquid crystal terahertz photonics with indium tin oxide nanowhiskers and graphene as functional electrodes | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1117/12.2079324 | en_US |
dc.identifier.journal | EMERGING LIQUID CRYSTAL TECHNOLOGIES X | en_US |
dc.citation.volume | 9384 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000353888500012 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |
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