標題: | Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes |
作者: | Chen, Fang-Ming Chang, Jih-Yuan Kuo, Yen-Kuang Lin, Bing-Cheng Kuo, Hao-Chung 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
關鍵字: | ultraviolet light-emitting diodes;electron blocking layer;polarization |
公開日期: | 1-一月-2015 |
摘要: | For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail. |
URI: | http://dx.doi.org/10.1117/12.2077946 http://hdl.handle.net/11536/125092 |
ISBN: | 978-1-62841-453-0 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.2077946 |
期刊: | GALLIUM NITRIDE MATERIALS AND DEVICES X |
Volume: | 9363 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |