標題: Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes
作者: Chen, Fang-Ming
Chang, Jih-Yuan
Kuo, Yen-Kuang
Lin, Bing-Cheng
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: ultraviolet light-emitting diodes;electron blocking layer;polarization
公開日期: 1-一月-2015
摘要: For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.
URI: http://dx.doi.org/10.1117/12.2077946
http://hdl.handle.net/11536/125092
ISBN: 978-1-62841-453-0
ISSN: 0277-786X
DOI: 10.1117/12.2077946
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES X
Volume: 9363
起始頁: 0
結束頁: 0
顯示於類別:會議論文


文件中的檔案:

  1. b2a8ff0dc3f40c017f7fede1e2aea858.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。