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dc.contributor.authorLin, Yan-Chengen_US
dc.date.accessioned2019-04-03T06:47:51Z-
dc.date.available2019-04-03T06:47:51Z-
dc.date.issued2015-01-01en_US
dc.identifier.isbn978-1-62841-463-9en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.2079540en_US
dc.identifier.urihttp://hdl.handle.net/11536/125093-
dc.description.abstractThe application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NCs powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.en_US
dc.language.isoen_USen_US
dc.subjectwater solubleen_US
dc.subjectCdTeen_US
dc.subjectcolloidal quantum dotsen_US
dc.subjecthigh pressureen_US
dc.subjectphase transitionen_US
dc.subjectnonradiative energy transferen_US
dc.titleWater-Soluble CdTe Nanocrystals under High Pressureen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.2079540en_US
dc.identifier.journalQUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS CHARACTERIZATION AND MODELING XIIen_US
dc.citation.volume9373en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000353894500011en_US
dc.citation.woscount3en_US
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