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dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorChung, Chen-Chenen_US
dc.contributor.authorHsu, Ching-Hsiangen_US
dc.contributor.authorHsiao, Chih-Jenen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:30:57Z-
dc.date.available2015-07-21T08:30:57Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-5760-6en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/125102-
dc.description.abstractInGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is found that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 10 degrees off GaAs substrates. Furthermore, smooth surface (rms roughness: 1.54 angstrom) and sharp interface for the GaAs/Al0.3Ga0.7As TDs were obtained when the (100) tilted 10 degrees off toward [111] GaAs substrate was used. The conversion efficiency of InGaP/GaAs dual-junction solar cell with N++-GaAs/P++-AlGaAs TD grown on the (100) tilted 10 degrees off toward (111) GaAs substrate is close to 20%.en_US
dc.language.isoen_USen_US
dc.subjectN++-GaAs/P++-AlGaAs tunnel diodesen_US
dc.subjectmisoriented GaAs substratesen_US
dc.subjectInGaP/GaAs dual junction solar cellsen_US
dc.titleEffect of Different Tunnel diodes on The Efficiency of Multi-junction III-V Solar cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage298en_US
dc.citation.epage300en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000353960000076en_US
dc.citation.woscount0en_US
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